Seagate Nytro 5350M 2.5" 3840 GB PCI Express 4.0 3D eTLC NVMe

Seagate Nytro 5350M 2.5" 3840 GB PCI Express 4.0 3D eTLC NVMe

Seagate Nytro 5350M, 3840 GB, 2.5", 5700 MB/s

3.84TB, PCIe Gen4 ×4 NVMe, 3D eTLC, 2.5", 105 g

Seagate
XP3840SE10005
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Seagate Nytro 5350M. SSD capacity: 3840 GB, SSD form factor: 2.5", Read speed: 5700 MB/s, Write speed: 2450 MB/s, Component for: PC/notebook

Lightspeed. Solid. Impressive. Consistent high performance for the modern data center. The Seagate© Nytro© 5050 series NVMe solid state drive represents the next generation of enterprise SSDs. Engineered for efficiency, high performance, and increased storage density in data centers, Nytro 5050 SSD eliminates performance bottlenecks and significantly improves quality of service (QoS).



Features

SSD form factor: 2.5"
SSD capacity: 3840 GB
Interface: PCI Express 4.0
Memory type: 3D eTLC
NVMe:
Component for: PC/notebook
Hardware encryption:
Target workload: Read Intensive (RI)
Read speed: 5700 MB/s
Write speed: 2450 MB/s
Random read (4KB): 900000 IOPS
Random write (4KB): 80000 IOPS
Read latency: 75 µs
Write latency: 12 µs
PCI Express interface data lanes: x4
Uncorrectable Bit Error Rate (UBER): < 1 per 10^17 bits read
Mean time between failures (MTBF): 2500000 h
TBW rating: 7000


Power

Power consumption (average): 12.5 W
Power consumption (idle): 6 W


Operational conditions

Operating temperature (T-T): 0 - 70 °C
Storage temperature (T-T): -40 - 85 °C
Operating shock: 1500 G


Weight & dimensions

Width: 70.1 mm
Depth: 100.4 mm
Height: 7.1 mm
Weight: 105 g


Logistics data

Products per master (outer) case: 20 pc(s)
XP3840SE10005
2024-05-13

Data sheet

Interface
PCI Express 4.0
Power consumption (idle)
6 W
Storage temperature (T-T)
-40 - 85 °C
Power consumption (average)
12.5 W
Weight
105 g
PCI Express interface data lanes
x4
Mean time between failures (MTBF)
2500000h
TBW rating
7000
Component for
PC/notebook
Products per master (outer) case
20 pc(s)
SSD capacity
3840 GB
SSD form factor
2.5"
Read speed
5700 MB/s
NVMe
Y
Write speed
2450 MB/s
Target workload
Read Intensive (RI)
Random read (4KB)
900000 IOPS
Random write (4KB)
80000 IOPS
Memory type
3D eTLC
Read latency
75 µs
Operating temperature (T-T)
0 - 70 °C
Write latency
12 µs
Depth
100.4 mm
Operating shock
1500 G
Height
7.1 mm
Hardware encryption
Yes
Width
70.1 mm
Uncorrectable Bit Error Rate (UBER)
< 1 per 10^17 bits read
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